Program

(Download the book of the abstracts)

Wednesday, December 13th

11:00-14:00    Registration
12:00-14:00    Lunch
14:00-14:15    Opening

Chairman: Dr. Gérald Dujardin, France

14:15-15:00    Keynote speaker: Prof. Noriaki Takagi, the University of Tokyo, Japan
 
Exploring Of 2d Materials From Silicene To Weyl Semimental.

15:00-15h35   Invited speaker: Dr. Geoffroy Prévot, INP-CNRS, France
 
Structure And Growth Mechanisms Of Silicene And Si Films On Ag(111).

15:35-15:55    Oral contribution: Michal Ochapski, University of Twente, Netherlands
Epitaxial Sn On H-bn Terminated ZrB2.

15:55-16:25    Coffee Break

Chairman: Prof.  Laurène Tétard, USA

16:25-17:00    Invited speaker: Prof. Laurence Masson, Aix-Marseille University, France
Si Nanoribbons On Ag(110): An Intriguing Epitaxial System.

17:00-17:20    Oral contribution: Peter Roese, Technische Universität Dortmund, Germany
Facing The Interaction Of Absorbed Silicon Nano-ribbons On Silver.

17:20-17:55    Invited speaker: Dr. Holger Vach, LPICM, Ecole Polytechnique, France
Graphite Substrates For The Formation Of Silicene And Germanene Nanosheets: Theoretical Predictions And Experimental Verifications.

18:00              Transfer to "Tour Eiffel" by Bus. Meeting point:  Main entrance of SOLEIL
20:15-23:00   Conference Dinner. Meeting point: Tour Eiffel

Thursday, December 14th


Chairman: Dr. Bernard Aufray, France

09:00-09:35   Invited speaker: Dr. Fabio Ronci, CNR, Roma, Italy
Silicene From A Chemist’s Point Of View: Definition And Stability.

09:35-10:10   Invited speaker: Dr. Paolo Moras, Istituto di Struttura della Materia – CNR, Italy
Electronic Structure Of Silicene Allotropes And Multilayer Si Films On Ag(111).

10:10-10:30   Oral contribution: Dr. Maria C. Asensio,Synchrotron SOLEIL, France
“more Than Moore”: Could Silicene Be The Future Of Electronics?

10:30-11:00   Coffee Break

Chairman: Dr. Holger Vach, France

11:00-11:35   Invited speaker: Dr. H. Jamgotchian, CINAM-CNRS Marseille, France
Periodic And Localized Strain Relaxation Of Silicene Layers On Ag(111).

11:35-11:55   Oral contribution: Khalid Quertite, Institut des Sciences Moléculaires d’Orsay, France
Silicene Growth On Nacl Isulating Thin Films.

11:55-12:30   Invited speaker: Dr. Guido Fratesi, University of Milan, Italy
Using A Buffer Layer To Tune Electron Injection Dynamics At The Organic-graphene/metal Interface.

12:30-14:30   Lunch

Chairman: Prof. Abdelilah Benyoussef, Morocco

14:30-15:05   Invited speaker: Prof. Mustapha Ait Ali, University Cadi Ayad, Morocco
Chemistry Of 2d-nanomaterials: Silicene And Phosphorene.

15:05-15:40   Invited speaker: Prof. Ming Hu, Rwth, Aachen University, Germany
Thermal Transport In Silicene: Counter-intuitive Phonons Beyond Graphene.

15:40-16:10   Coffee Break

Chairman: Dr. Fabio Ronci, Italy

16:10-16:45   Invited speaker: Prof. Laurène Tétard, University of Central Florida, USA
Functional Nanoscale Imaging Of 2d Material Properties.

16:45-17:20   Invited speaker: Prof. Salvador Barraza-Lopez, University of Arkansas, USA
An Overview Of 2d Materials With Structural Degeneracies, And Consequences On Material Properties.

17:30-18:30    Poster Session

Friday, December 15th


Chairman: Dr. Andrew Mayne, France

09:00-09:35  Invited speaker: Prof. Thomas Seyller, Technical University of Chemnitz, Germany
Epitaxial Graphene On Sic: Growth, Properties And Manipulation.

09:35-09:55  Oral contribution: Aldo Ugolotti, Universita degli Studi di Milano-Bicocca, Italy
Tuning The Electronic Properties Of Silicene Through Half-hydrogenation Or Graphene Support. 

09:55-10:15  Oral contribution: Prof. Nabil Rochdi, SIAM-FSSM, Cadi Ayyad University, Morocco
Elaboration And Study Of Zinc And Zinc Oxide Ultrathin Layers On Silver Substrate At Room Temperature.
 

10:15-10:45 Coffee Break

Chairman: Prof. Salvador Barraza-Lopez, USA

10:45-11:20   Invited speaker: Dr. Lenart Dudy, SOLEIL synchrotron, TEMPO beamline, France
Spectroscopy And Synthesis Of Bismuthene.

11:20-11:40  Oral contribution: Curcella Alberto, INP-CNRS, France
In-situ Stm Measurements Of Si Growth On Layered Materials.

11:40-12:00  Concluding remarks
12:00-14:00  Lunch

  

                          
 

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